View TGA4502-SCC_2198588.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

product data sheet july 22, 2003 1 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com k band high power amplifier TGA4502-SCC key features ? 17-27 ghz application frequency range ? 22 db nominal gain ? 29 dbm nominal p1db ? 37dbm nominal otoi ? 15 db nominal return loss ? 0.25 um phemt 2mi technology ? bias 7v @ 760 ma ? chip dimensions 1.52 x 3.29 x .1mm primary applications ? k band sat-com ? point-to-point radio ? point-to-multipoint communications fixtured measured performance bias conditions: vd = 7v, id = 760ma 21 23 25 27 29 31 33 35 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) p1db (dbm) psat p1db -30 -24 -18 -12 -6 0 6 12 18 24 30 14 16 18 20 22 24 26 28 30 32 frequency (ghz) gain (db) -30 -24 -18 -12 -6 0 6 12 18 24 30 return loss (db) gain inpu t output product description the triquint TGA4502-SCC is a compact high power amplifier mmic for k-band applications. the part is designed using triquints proven standard 0.25 um gate power phemt production process. the TGA4502-SCC provides a nominal 29 dbm of output power at 1 db gain compression from 17-27 ghz with a small signal gain of 22 db. the part is ideally suited for low cost emerging markets such as k-band satellite communications, point-to-point radio, and point-to-multi point communications. the TGA4502-SCC is 100% dc and rf tested on-wafer to ensure performance compliance. t
product data sheet july 22, 2003 2 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com TGA4502-SCC table i maximum ratings 1/ symbol parameter value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 880 ma 2/ | i g | gate supply current 28 ma p in input continuous wave power 26 dbm 2/ p d power dissipation 5.3 w 2/, 3/ t ch operating channel temperature 150 c 4/, 5 / t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ current is defined under no rf drive conditions. under rf drive, the supply current may rise to 1100 ma without damage. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ when operated at this power dissipation with a base plate temperature of 70 c, the median life is 1 e+6 hours. 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ these ratings apply to each individual fet.
product data sheet july 22, 2003 3 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table ii dc probe test (t a = 25 c, nominal) symbol parameter minimum maximum unit i dss, q1 saturated drain current 60 282 ma g m, q1 transconductance 132 318 ms v p, q1,2, 3-6, 7-10 pinch-off voltage -1.5 -0.5 v v bvgd, q1-10 breakdown voltage gate-drain -30 -13 v v bvgs, q1,2,3-6,7-10 breakdown voltage gate-source -30 -13 v note: q1 & q2 are 600 um fets. q3-6 & q7-10 are 2400 um fets. q1-10 is a 6000 um fet. TGA4502-SCC table iii rf characterization table (t a = 25 c, nominal) vd = 7v, id = 760 ma limits symbol parameter test condition minimum typical maximum units gain small signal gain f = 17 C 18 ghz f = 17.5, 18 ghz f = 20, 22, 24 ghz f = 26.5 ghz f = 27 ghz -- 17 18 17 -- 22 -- 23 -- 20 -- -- -- -- -- db irl input return loss f = 17 C 27 ghz f = 17.5, 18, 20, 22, 24 ghz f = 26.5 ghz -- -- -- 20 -- -- -- 12 10 db orl output return loss f = 17 C 27 ghz f = 17.5, 18, 20, 22, 24 ghz f = 26.5 ghz -- -- -- 15 -- -- -- 12 10 db p 1db output power @ 1db gain compression f = 17 C 27 ghz f = 18, 26.5 ghz -- 27 30 -- -- dbm otoi * output third order intercept f = 17 C 27 ghz f = 18, 26 ghz -- 34.5 37 -- -- -- dbm * pin/tone = -7dbm, separation = 0.010 ghz
product data sheet july 22, 2003 4 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com table iv thermal information parameter test conditions t ch ( o c) r q jc ( c/w) t m (hrs) r q jc thermal resistance (channel to backside of carrier) vd = 7 v id = 760 ma pdiss = 5.3 w 150 15.1 1 e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. TGA4502-SCC
product data sheet july 22, 2003 5 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com TGA4502-SCC 21 23 25 27 29 31 33 35 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) p1db (dbm) psat p1db -30 -24 -18 -12 -6 0 6 12 18 24 30 14 16 18 20 22 24 26 28 30 32 frequency (ghz) gain (db) -30 -24 -18 -12 -6 0 6 12 18 24 30 return loss (db) gain inpu t output measured fixtured data bias conditions: vd = 7v, id = 760ma t
product data sheet july 22, 2003 6 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data bias conditions: vd = 7v, id = 760ma 34 35 36 37 38 39 40 18 20 22 24 26 frequency (ghz) otoi (dbm) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 26 pout/tone (dbm) imd3 & imd5 (dbc) imd5 @ 22ghz imd3 @ 22ghz TGA4502-SCC
product data sheet july 22, 2003 7 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com measured fixtured data bias conditions: vd = 7v, id = 760ma at frequency: 18ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 20ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 24ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) - 70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 26ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm ) single tone power imd3 imd5 TGA4502-SCC
product data sheet july 22, 2003 8 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram TGA4502-SCC notes: 1. connection to power det, ref diode not shown. 2. 0.1 m f cap on gate, drain lines not shown but required. 3. for high power operation, gate voltage is recommended from both sides. 4. drain voltage is required from both sides for id > 780ma. vg vd output tfn 100pf 100pf input tfn 100pf vg (one side optional) 0.01 m f dq cap (opt.) vd (one side optional for id < 780 ma) 100pf
product data sheet july 22, 2003 9 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com tga4502 built-in power detector on-chip diode functions as envelope detector external coupler and dc bias required external coupler (-20db) tga4502 50 w c=2pf video out (v det ) 10k w external dc bias rf out rf out v bias 100pf 100pf tga4502 with external test coupler (amplifier bias connections not shown) v det rf in rf out tga4502 measured detector voltage offset vs output power with 20db coupler: vb=0.8v, f = 20ghz, coupler loss is uncalibrated, 10k w load 0.01 0.1 1 10 8 101214161820222426283032 pout (dbm) detector voltage (v) TGA4502-SCC
product data sheet july 22, 2003 10 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4502-SCC 1.898 (0.075) 1.898 (0.075) 0.000 0.686 (0.027) 0.000 0.610 (0.024) 0.875 (0.034) 0.833 (0.033) 0.220 (0.009) 3.188 (0.126) 0.098 (.004) 3.004 (0.118) 0.373 (0.015) 1.524 (0.060) 3.286 (0.129) 0.612 (0.024) 0.875 (0.034) 0.095 (0.004) 3.136 (0.123) 1.262 (0.050) 1.262 (0.046) 1 8 34 5 67 2 9 10 11 12 13 14 15 bond pad #1 (rf input) 0.200 x 0.100 (0.008 x 0.004) bond pad #2 (rf output) 0.200 x 0.100 (0.008 x 0.004) bond pad #3 vg2 0.100 x 0.100 (0.004 x 0.004) bond pad #4 dq 0.100 x 0.100 (0.004 x 0.004) bond pad #5 vg3 0.100 x 0.100 (0.004 x 0.004) bond pad #6 vd3 0.180 x 0.100 (0.007 x 0.004) bond pad #7 det out 0.100 x 0.100 (0.004 x 0.004) bond pad #8 pwr det 0.175 x 0.100 (0.007 x 0.004) bond pad #9 ref2 0.100 x 0.100 (0.004 x 0.004) bond pad #10 ref1 0.100 x 0.100 (0.004 x 0.004) bond pad #11 vd3 0.180 x 0.100 (0.007 x 0.004) bond pad #12 vg3 0.100 x 0.100 (0.004 x 0.004) bond pad #13 dq 0.100 x 0.100 (0.004 x 0.004) bond pad #14 vg2 0.100 x 0.100 (0.004 x 0.004) bond pad #15 ref3 0.100 x 0.100 (0.004 x 0.004) units: millimeters (inches) thickness: 0.100 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance +/- 0.051 (0.002) gnd is backside of mmic 1.382 (0.544)
product data sheet july 22, 2003 11 triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (for 30 sec max). an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 c. TGA4502-SCC die are shipped in h20-074149 waffle packs.

▲Up To Search▲

Price & Availability of TGA4502-SCC

	To Download TGA4502-SCC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .